Method for manufacturing aluminum back reflector for silicon-solar cell, involves smoothing substrate before contact to substrate backside in atomic dimension, and applying aluminum layer immediately on surface of substrate backside

Publication: DE102010034551A1
Published: 2012-02-23
Family Size: 1
Granted: No

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a method for manufacturing an aluminum back reflector for silicon-solar cells. The invention involves smoothing the backside of a silicon wafer down to the atomic level, then directly applying an aluminum layer followed by a metal film. Special surface treatments and wet-chemical processes are used to enhance the quality and performance of the contact between the silicon substrate and the aluminum layer.

Use CasesContent extracted from patent full text and abstract with AI.

  • Production of high-efficiency silicon solar cells with improved back reflectors
  • Manufacturing solar panels for residential, commercial, or industrial energy systems
  • Fabrication processes in photovoltaic plants to achieve better performance modules
  • Retrofit or upgrading of existing solar cell manufacturing lines to improve reflectivity and efficiency

BenefitsContent extracted from patent full text and abstract with AI.

  • Enhances efficiency of silicon solar cells by improving back reflection of light
  • Reduces energy loss due to better surface contact and minimized defects
  • Potentially lowers manufacturing costs by providing a more effective process
  • Improves cell reliability and lifespan with optimized surface treatments
  • Helps achieve higher yield and product consistency in solar cell production

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Sub Classifications

Semiconductor & Solid-State Devices

CPC Codes

H10F10/14H10F71/00H10F71/121H10F77/48

Inventors & Applicants

Applicants

Helmholtz Zent B Mat & Energ

Patent Abstract

The method involves utilizing a surface orientation for a substrate crystalline silicon. A substrate is smoothed before contact to a substrate backside in an atomic dimension. An aluminum layer is applied immediately on the smoothed surface of the substrate backside. A metal film is applied on the aluminum layer. The surface orientation is treated for removing saw damage using a wet chemical etching process using potassium hydroxide-containing solution. A wet-chemical oxide is generated on the surface of the substrate backside using an oxidizing solution during wet-chemical smoothing process. An independent claim is also included for a silicon-solar cell comprising front and back contacts formed on a silicon substrate.

Key Information

Publication No.

DE102010034551A1

Family ID

45557146

Publication Date

2012-02-23

Application No.

DE102010034551A

Application Date

2010-08-17

Priority Date

2010-08-17

Granted

No

Possible Cooperation

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