Method for the Production of Doped Semiconductor Layers

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention describes a method for creating a doped semiconductor or conductive layer by first applying a porous layer onto a substrate. This layer is then exposed to a plasma-assisted doping process, in which dopant elements are provided in excess compared to other reactive components, resulting in efficient doping of the layer.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing advanced semiconductor devices such as transistors and integrated circuits
• Creating precise conductive paths or regions in microelectronics
• Developing sensor surfaces with tailored electrical properties
• Producing thin-film photovoltaic cells with improved conductivity
• Fabricating high-performance LEDs or optoelectronic devices

BenefitsContent extracted from patent full text and abstract with AI.

• Enables more precise and uniform doping of semiconductor layers
• The plasma-assisted approach can enhance doping efficiency and control
• Allows for the creation of highly conductive or semiconductive thin films
• Potentially compatible with existing semiconductor manufacturing processes
• May lead to improved performance and reliability in electronic devices

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

Ein Verfahren zur Herstellung einer dotierten leitenden Schicht, umfassend die Bereitstellung einer porösen Schicht aus leitendem oder halbleitendem Material auf einer Oberfläche eines Substrats, und Ausführung eines plasmagestützten Dotierungsschritts zur Dotierung der porösen, Schicht unter Bildung einer dotierten Schicht, wobei in dem Dotierungsschritt die Dotanten im Verhältnis zu weiteren reaktiven Edukten überschüssig vorliegen.