Absorber for a Photovoltaic Cell with Increased Open-Circuit Voltage

Publication: DE102019105117A1
Published: 2020-09-03
Family Size: 2
Granted: Yes (1/2)

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes an absorber for photovoltaic (solar) cells that is designed to improve open-circuit voltage. The absorber is primarily composed of crystalline, specifically n-doped, silicon that contains multiple domains made of amorphous, especially n-doped, silicon. This unique structure enhances the conversion of incoming photons into excited charge carriers within the absorber.

Use CasesContent extracted from patent full text and abstract with AI.

  • Solar panels for residential and commercial electricity generation
  • Photovoltaic cells in portable electronic devices
  • Building-integrated photovoltaics (solar windows, roofs)
  • Solar-powered chargers for vehicles and equipment

BenefitsContent extracted from patent full text and abstract with AI.

  • Achieves higher open-circuit voltage, potentially increasing cell efficiency
  • Combines crystalline and amorphous silicon advantages for improved performance
  • Could lower overall manufacturing costs by leveraging established silicon processes
  • Enhances energy conversion and charge separation within the cell

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Sub Classifications

Semiconductor & Solid-State Devices

CPC Codes

H10F10/166H10F77/14H10F77/1625H10F77/1662

Inventors & Applicants

Applicants

Helmholtz-zentrum Berlin für Mat und Energie Gesellschaft mit Beschränkter Haftung

Patent Abstract

Die Erfindung betrifft einen Absorber (1) für eine photovoltaische Zelle (100), der dazu ausgebildet ist, auftreffende Photonen (200) zu absorbieren und deren Energie in einen angeregten Zustand eines Ladungsträgers (201)in dem Absorber (1) umzusetzen, wobei der Absorber (1) einen ersten Bereich (10) aufweist, der aus kristallinem, insbesondere n-dotiertem Silicium besteht, dadurch gekennzeichnet, dass der erste Bereich (10) eine Vielzahl an Domänen (2) einschließt, wobei die Domänen (2) aus amorphem, insbesondere n-dotiertem Silicium bestehen.

Key Information

Publication No.

DE102019105117A1

Family ID

72046432

Publication Date

2020-09-03

Application No.

DE102019105117A

Application Date

2019-02-28

Priority Date

2019-02-28

Granted

Yes (1/2)

Possible Cooperation

For further information please contact the transfer office.