Absorber for a Photovoltaic Cell with Increased Open-Circuit Voltage
Simple SummaryContent extracted from patent full text and abstract with AI.
This invention describes an absorber for photovoltaic (solar) cells that is designed to improve open-circuit voltage. The absorber is primarily composed of crystalline, specifically n-doped, silicon that contains multiple domains made of amorphous, especially n-doped, silicon. This unique structure enhances the conversion of incoming photons into excited charge carriers within the absorber.
Use CasesContent extracted from patent full text and abstract with AI.
- Solar panels for residential and commercial electricity generation
- Photovoltaic cells in portable electronic devices
- Building-integrated photovoltaics (solar windows, roofs)
- Solar-powered chargers for vehicles and equipment
BenefitsContent extracted from patent full text and abstract with AI.
- Achieves higher open-circuit voltage, potentially increasing cell efficiency
- Combines crystalline and amorphous silicon advantages for improved performance
- Could lower overall manufacturing costs by leveraging established silicon processes
- Enhances energy conversion and charge separation within the cell
Technical Classifications (CPCs)
Main Classifications
Electrical & Electronic Tech
Sub Classifications
Semiconductor & Solid-State Devices
CPC Codes
Inventors & Applicants
Inventors
Applicants
Helmholtz-zentrum Berlin für Mat und Energie Gesellschaft mit Beschränkter Haftung
Patent Abstract
Die Erfindung betrifft einen Absorber (1) für eine photovoltaische Zelle (100), der dazu ausgebildet ist, auftreffende Photonen (200) zu absorbieren und deren Energie in einen angeregten Zustand eines Ladungsträgers (201)in dem Absorber (1) umzusetzen, wobei der Absorber (1) einen ersten Bereich (10) aufweist, der aus kristallinem, insbesondere n-dotiertem Silicium besteht, dadurch gekennzeichnet, dass der erste Bereich (10) eine Vielzahl an Domänen (2) einschließt, wobei die Domänen (2) aus amorphem, insbesondere n-dotiertem Silicium bestehen.
Key Information
Publication No.
DE102019105117A1
Family ID
72046432
Publication Date
2020-09-03
Application No.
DE102019105117A
Application Date
2019-02-28
Priority Date
2019-02-28
Granted
Yes (1/2)
Possible Cooperation
For further information please contact the transfer office.