Plasma ion source for vacuum deposition system, has metal that is provided in region of electrical insulating element made of ceramic material

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This patent describes a plasma ion source used in vacuum deposition systems, where a metal (such as titanium, zirconium, or hafnium) is incorporated into a ceramic insulating element made of boron nitride. The metal, which has a high melting point (above 1500°C), is placed in a specific region shaped like a truncated cone beneath the cathode to improve the device's performance and durability during high-temperature operations.

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• Vacuum deposition processes in semiconductor manufacturing
• Thin film coating for electronic components or optical devices
• Material processing requiring highly stable plasma ion sources
• Plasma-enhanced surface treatment or modification
• Research laboratories needing advanced plasma source technology

BenefitsContent extracted from patent full text and abstract with AI.

• Enhanced thermal stability due to high-melting-point metal integration
• Increased durability and operational lifespan at high temperatures
• Improved plasma generation efficiency from optimized component design
• Reduced failure rates in demanding industrial or research environments
• Compatibility with advanced thin-film deposition techniques

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Patent Abstract

The plasma ion source (1) has a cathode (2) that surrounds an anode (3). An electrically insulating element (4) is arranged below the cathode. The electrically insulating element is made of ceramic material selected from boron nitride. A metal (5) is provided in the region (4b) of the electrical insulating element. The metal is selected from titanium, zircon or hafnium. The metal is provided with a melting point of above 1500[deg] C. The region of the electrical insulating element is in form of a truncated cone.