AlGaInN-based device with a tunnel junction

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes an AlGaInN-based semiconductor device (particularly a tunneling diode) that features a highly controlled tunnel junction. The core innovation is the intentional introduction of foreign atoms (dopants) that create deep-level defects within the junction's depletion region. These defects add energy states that enhance quantum tunneling of charge carriers between n-type and p-type layers, thereby improving tunneling efficiency and device reproducibility.

Use CasesContent extracted from patent full text and abstract with AI.

• Integrating tunnel diodes into multi-junction (tandem) solar cells to connect subcells with minimal electrical losses.
• Improving the electrical connection between layers in high-efficiency LEDs, especially in stacked or multi-active region architectures.
• Enabling series connection of optoelectronic devices without significant voltage drops or performance loss.
• Use in high-frequency electronic applications due to the fast response of tunnel diodes.
• Facilitating development of advanced photodetectors and laser diodes needing sharp and efficient electrical junctions.

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly improved and reproducible tunnel diode performance due to controlled defect engineering.
• Higher tunnel currents and lower resistance at the junction, enabling more efficient device operation.
• Realization of high-quality tunnel junctions using industry-compatible growth methods (e.g., MOCVD/MOVPE).
• Ability to use targeted doping and defect placement to tailor electronic properties for specific device needs.
• Enhances device yields and robustness in mass production by reducing variability from uncontrolled defects.
• Facilitates series connection and advanced architectures in LEDs and solar cells, improving overall efficiency and performance.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to an AlGaInN-based semiconductor component and to a structural element module consisting thereof, containing a tunnel diode (1, 2, 3, 4), which in turn comprises an n-doped, electrically conductive layer having an electron concentration ≥ 1x1019 cm-3 and a p-doped, electrically conductive layer having a hole concentration ≥ 7x1017 cm-3, characterised by foreign atoms that generate deep imperfections in at least one sub-region of the depletion region, said sub-region forming in the contact region of the p- and n-type layers and having an area concentration of deep imperfections >6x1011cm-2, said imperfections generating at least one energetic state below the energy level of the n-type dopant or above the energy level of the p-type dopant within the energy gap of the respective material.