Method for growing a semiconductor device and semiconductor device

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention describes a method for growing high-quality semiconductor structures on silicon substrates by sequentially depositing two metal nitride layers using plasma-assisted sputtering. The key novelty is that the second metal nitride layer is grown with a higher hydrogen content in the process gas, resulting in superior crystal quality and particularly smooth surfaces. This approach greatly improves the suitability of silicon as a substrate for advanced semiconductor devices.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacture of high-efficiency LEDs and laser diodes based on group III-nitride materials on silicon wafers.
• Production of power electronics components such as transistors on cost-effective silicon substrates.
• Fabrication of solar cells with enhanced performance due to improved interface quality.
• Integration of optoelectronic devices with silicon-based circuits for advanced microelectronics.
• Development of sensors and photodetectors requiring high-quality nitride layers on silicon.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables production of semiconductor devices with higher crystal quality and smoother surfaces on silicon substrates.
• Improves yield and performance by reducing defects and roughness in critical layers.
• Allows use of cost-effective, large-diameter silicon wafers instead of expensive substrates like sapphire.
• Facilitates integration of III-nitride devices with existing silicon technology, expanding potential applications.
• Offers potential cost savings and scalability for industrial-scale manufacturing of advanced semiconductor devices.

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Inventors & Applicants

Patent Abstract

The invention relates to a method for growing a semiconductor assembly, the method comprising the steps of providing a silicon substrate and growing two metal nitride layers, each metal nitride layer being grown by means of a metal target and a plasma. For the second metal nitride layer a higher hydrogen content is used, allowing for better crystal quality than in known methods. The invention further relates to a semiconductor assembly that is produced accordingly.