Group Iii Nitride-Based Layer Sequence, Component, and Production Method

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This invention presents a specific method for making group III nitride semiconductor layers, particularly by forming an AlxGayIn1-x-yN-based seed layer with high aluminum content (x > 0.2) on a group IV substrate such as silicon or germanium. This approach is designed to solve key issues like substrate etching and poor crystal quality when growing nitride layers on common substrates. The layered structure enhances electrical and material properties, making it suitable for high-efficiency optoelectronic devices, like LEDs, diodes, and solar cells. The patent also describes a process for manufacturing these structures.

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• High-efficiency solar cells for terrestrial or space applications, combining group III-nitride layers with silicon or germanium substrates.
• Light-emitting diodes (LEDs) with improved interface quality and reduced losses between nitride layers and the substrate.
• Photodetectors or photosensors using group III-nitride thin films for improved sensitivity and durability.
• High-voltage or high-frequency transistor devices utilizing the improved nitride/substrate interface.
• Power electronics requiring robust, low-resistance, vertically conducting diodes or switches.

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly reduces or eliminates meltback etching, improving substrate integrity and material yield.
• Yields high-quality nitride layers with fewer defects and better crystallinity when grown on silicon or germanium.
• Provides low electrical resistance across the substrate/nitride interface, optimal for vertically conducting devices.
• Facilitates monolithic integration of advanced optoelectronic devices with mainstream semiconductor technology (e.g., CMOS compatibility).
• Enhances device performance, stability, and lifespan, especially in harsh environments or under high radiation (e.g., space applications).
• Allows for tunable bandgap engineering by adjusting the composition of the nitride layers.

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Patent Abstract

The invention relates to a group III nitride-based layer sequence (100) at least comprising an AlxGayln1-x-yN-based seed layer (102) and an AlxGayln1-x-yN layer (103) on a group IV substrate (101), wherein x xGayln1-x-yN seed layer (102) lies on the substrate (101), and x > 0.2.