Layer System of a Silicon-Based Support and a Heterostructure Applied Directly onto the Support

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This invention discloses a layer system composed of a silicon-based substrate with a monocrystalline surface, on which a heterostructure (e.g., semiconductor or optoelectronic material) is grown directly. The silicon substrate is intentionally doped with selected elements (such as oxygen, nitrogen, or carbon) at defined concentrations across a significant portion of its thickness. These dopants prevent plastic deformation and cracking in the silicon substrate during high-temperature processing and the growth of strained (heteroepitaxial) layers.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing of high-brightness LEDs and optoelectronic devices using Group III-nitride materials (such as GaN, AlN) grown on silicon wafers.
• Production of high-frequency and high-power electronic transistors (HEMTs, RF devices) where thick or strained semiconductor layers are needed on silicon substrates.
• Fabrication of MEMS devices and other microelectronic or sensor structures requiring thick, stress-prone functional layers on silicon.
• Substrate engineering for transfer and lift-off processes in thin-film device manufacturing where substrate reusability and wafer flatness are critical.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables the use of standard-thickness silicon substrates for high-temperature, strain-prone heterostructure growth without risk of plastic deformation or cracking.
• Improves yield and quality of electronic and optoelectronic devices by maintaining substrate flatness and structural integrity during processing.
• Supports the manufacturing of thicker or more strained functional layers, expanding achievable device architectures and functionalities.
• Allows utilization of cost-effective silicon substrates rather than more expensive materials, reducing overall production costs.
• Provides the ability to tailor substrate mechanical properties by controlled doping, making the process flexible for various device needs.

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Patent Abstract

The invention relates to a layer system of a silicon-based support having a monocrystalline surface and a heterostructure applied directly onto the monocrystalline surface. The layer system according to the invention is characterized in that the support comprises a silicon substrate doped with one or more dopants, the doped portion extending across at least 30% of the thickness of the doped silicon substrate and a concentration of the dopant in the doped portion of the silicon substrate being defined such that a corrected threshold concentration (GK) meets the condition of formula (1):, wherein i represents the respective dopant in the silicon substrate, Ndot represents the dopant concentration in cm-3 and EA represents an energy barrier in eV of the dopant inhibiting dislocation glide.