Device comprising a transparent conductive nitride layer

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This patent describes an electronic component with a transparent, conductive nitride layer, specifically made from the AlGaInN material system that is highly doped with certain donor elements (e.g., germanium, tin, lead, sulfur, or tellurium) beyond a significant concentration threshold. This innovation allows the creation of layers that can serve as both optically transparent and electrically conductive contacts for semiconductor devices, such as LEDs, solar cells, and sensors, providing an alternative to traditional materials like Indium Tin Oxide (ITO). The new transparent conductor is chemically and thermally stable, can be fabricated with established deposition techniques, and is compatible with existing semiconductor manufacturing processes.

Use CasesContent extracted from patent full text and abstract with AI.

• Optoelectronic devices such as LEDs, especially in displays and lighting applications, as a transparent conductive contact layer.
• Solar cells, where a transparent electrode is required for current collection without blocking incoming light.
• Photodetectors and sensors that demand transparent and conductive top contacts.
• Flexible or monolithic LED displays requiring robust and long-lived transparent contacts.
• Biomedical devices where biocompatible, transparent contacts are necessary for cell interfacing.
• High-temperature or chemically aggressive environments needing stable transparent electrodes.

BenefitsContent extracted from patent full text and abstract with AI.

• Eliminates dependence on scarce materials like Indium used in ITO, reducing material costs and resource constraints.
• The nitride layer offers higher chemical and thermal stability compared to alternatives such as ZnO or ITO.
• Can be fabricated using epitaxial and standard thin-film deposition techniques, integrating smoothly into existing manufacturing workflows.
• Provides high electrical conductivity and optical transparency, suitable for demanding optoelectronic applications.
• Enables direct or simplified electrical contact without extensive metallization, potentially reducing process steps and costs.
• Good lattice match and compatibility with group III-nitride devices (e.g., GaN LEDs) results in improved long-term stability and device longevity.
• Certain nitride compositions (e.g., GaInN) are biocompatible, opening up applications in biomedical engineering.

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Patent Abstract

The invention relates to a component having a transparent conductive nitride layer, characterized by a layer in the AlGaInN system and a doping with a flat donor above a concentration of 5x1019cm-3.