Field Effect Transistor

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a field effect transistor (FET) structure featuring a specially designed charge carrier reservoir layer placed below the upper semiconductor layer. This reservoir has a higher concentration of charge carriers than its surroundings and is set apart at a defined distance. The key innovation ensures that when the device is exposed to radiation (e.g., in space or nuclear environments), changes to the electrical characteristics of the transistor are minimized. The reservoir compensates for radiation-induced defects by supplying charge carriers, thus stabilizing device performance even under harsh conditions.

Use CasesContent extracted from patent full text and abstract with AI.

• Space electronics and satellites, where resistance to cosmic and solar radiation is critical
• Nuclear power plants or other environments exposed to radiation, requiring long-lifetime, stable electronics
• Military or aerospace applications where electronics may be exposed to ionizing environments
• High-reliability industrial control systems in extreme conditions (e.g., high-radiation, high-temperature)
• Automotive electronics for future vehicles, especially those exposed to harsh environmental factors

BenefitsContent extracted from patent full text and abstract with AI.

• Greatly improved resistance to ionizing radiation, extending the device's functional life in harsh environments
• Stable electrical performance over long periods, even after exposure to high radiation doses, reducing maintenance and replacement needs
• Customizable for both electron and hole charge carriers by adjusting the reservoir and layer structure
• Applicable to various semiconductor materials (e.g., GaN, GaAs, InP, etc.), allowing integration with existing manufacturing processes
• Improved reliability and safety for critical electronic systems in aerospace, defense, and nuclear sectors

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a field effect transistor comprising lower (102) and upper (103) semiconductor layers. A charge carrier reservoir layer (110, 112) that is formed below the upper semiconductor layer (103), at a distance therefrom, has a higher charge carrier density than the surroundings and ensures that radiation-induced damage only minimally affects the electrical characteristics of the field effect transistor.