Semi-polar, Wurtzite-Type, Group Iii Nitride Based Semiconductor Layers and Semiconductor Components Based Thereon

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This invention describes a new method for growing semi-polar, wurtzite-type, group III nitride semiconductor layers (such as GaN) directly on planar substrates like silicon (Si), silicon carbide (SiC), or gallium arsenide (GaAs) with specific surface orientations, without the need for complex prior structuring. By using particular substrate orientations and careful surface preparation, the technique enables the formation of high-quality, polarization-reduced nitride layers that are crucial for many advanced electronic and optoelectronic devices.

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• Manufacturing high-efficiency light-emitting diodes (LEDs) with enhanced brightness and performance due to reduced polarization effects.
• Fabrication of high-electron-mobility transistors (HEMTs) and power electronics requiring group III nitride layers on cost-effective substrates like silicon.
• Production of surface acoustic wave (SAW) devices for advanced sensors and filters in telecommunications and chemical detection.
• Integration of group III nitride-based optoelectronic or electronic components into silicon-based microelectromechanical systems (MEMS).
• Development of next-generation laser diodes, photodetectors, and other semiconductor devices where polarization reduction improves efficiency or functionality.

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• Enables cost-effective and scalable production by using widely available and affordable substrates like silicon.
• Simplifies the manufacturing process by eliminating the need for complex substrate structuring before layer growth.
• Reduces polarization effects in group III nitride layers, improving efficiency and yield of optoelectronic devices (e.g., brighter and more efficient LEDs).
• Allows for the integration of high-performance group III nitride devices onto silicon platforms, supporting advanced hybrid and monolithic circuits.
• Enhances material quality and crystalline orientation by exploiting specific substrate surface geometries and optimized process conditions.

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Patent Abstract

The invention relates to semi-polar, wurtzite-type, group III nitride based semiconductor layers and semiconductor components based thereon. According to the invention, group III nitride layers can be used in a plurality of ways in electronic and optoelectronic fields. The growth of said types of layers occurs, as a rule, on substrates such as sapphire, SiC and recently Si (111). The obtained layers are, as a rule, oriented in the direction of growth in a polar and/or c-axis manner. For many optoelectronic applications, and also for acoustic applications in SAWs, the growth of non or semipolar group III nitride layers is interesting and/or necessary. Said method enables the polarisation reduced group III nitride layers to grow in a simple and economical manner without prior structuring of the substrate.