Light-Emitting Semiconductor Device or Semiconductor Device Module

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention relates to a light-emitting semiconductor component or module that uses materials from the group-III nitride system. It features a specially designed conductive layer with a high concentration of holes (positive charge carriers), which is adjacent to a group-III nitride layer. This configuration improves the electrical and light-emitting performance of the component.

Use CasesContent extracted from patent full text and abstract with AI.

• LED lighting for residential, commercial, or industrial environments
• Light sources in displays such as TVs, smartphones, or monitors
• Automotive lighting systems including headlights and tail lights
• Medical devices that require semiconductor-based lighting or sensing
• Optoelectronic components in communication devices

BenefitsContent extracted from patent full text and abstract with AI.

• Enhanced electrical conductivity leads to better device efficiency
• Improved light-emitting performance and brightness
• Potential for lower energy consumption
• Better integration with existing group-III nitride technologies (like GaN LEDs)
• Possible longer lifespan and reliability of the semiconductor component

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a light-emitting semiconductor device (1, 2) in a first material system of Group-III nitrides (101, 102, 103, 104, 105, 201, 202, 203, 204, 205), characterized by a conductive layer in a second material system (106, 206) having a bulk hole concentration above 1×10 cm⁻³ and applied adjacent to a Group-III nitride layer (105, 205).