Semiconductor Transistor Component

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention is a semiconductor transistor component made from group-III nitride materials, featuring a gate contact and a specifically designed p-type (hole-conducting) layer with a high volume hole concentration. This structure is intended to improve the electrical performance of the device.

Use CasesContent extracted from patent full text and abstract with AI.

• High-power electronic devices
• High-frequency communication equipment
• Power amplifiers
• Switches in energy conversion circuits
• RF (radio frequency) electronics

BenefitsContent extracted from patent full text and abstract with AI.

• Enhanced electrical performance due to improved hole concentration
• Better efficiency in power handling and switching
• Potential for higher frequency operation
• Improved device reliability and longevity
• Supports advanced, compact, and efficient electronic systems

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a semiconductor transistor device (1, 2) in a first material system of group-III nitrides (10, 11, 20, 21, 22) with a gate contact (17, 27), comprising a p-type conductive layer in a second material system (15, 23), having a bulk hole concentration above 1×10 cm.