Semiconductor device and method for its manufacture

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This patent describes a semiconductor device, particularly Group-III nitride-based high-power transistors and photodetectors, and a method for manufacturing it. The innovation involves adding a chlorinated transition metal during the layer deposition process to achieve devices with lower leakage currents and improved interface quality.

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• High-power transistors for power electronics and RF applications
• Photodetectors in optical communication systems
• Devices for efficient energy conversion, such as inverters and amplifiers
• Semiconductor components in advanced automotive or industrial systems

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• Reduces leakage currents, improving device performance and energy efficiency
• Enhances interface quality for greater reliability and device lifespan
• Enables the production of higher-quality Group-III nitride-based electronic and optoelectronic devices
• Facilitates advancements in manufacturing techniques for next-generation semiconductors

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Patent Abstract

The present invention relates to a semiconductor device and methods for its manufacture. Group-III-nitride based high-performance transistors as well as photodetectors require the lowest possible leakage currents and high-quality interfaces. This is achieved by the addition of a chlorinated transition metal during layer deposition, which results in a high-quality device.