Method for Selective Surface Processing by Means of Directional Beams

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This patent describes a method for selectively processing different regions on the surface of a semiconductor substrate using directional beams (such as light, electrons, or ions). By applying the beam at certain angles to faceted or undulated surfaces, different sections receive varying beam intensities according to their orientation. This allows precise, self-aligned modification or treatment (like etching or doping) of specific areas without complex masking steps.

Use CasesContent extracted from patent full text and abstract with AI.

• Selective doping or etching of semiconductor devices, such as MOSFETs, to optimize channel and source placement based on surface orientation.
• Fabrication of advanced microelectronic devices that leverage surface morphology for improved performance.
• Creating patterned surfaces on materials for sensors, photodetectors, or optoelectronic devices by precise beam exposure.
• Development of power semiconductor devices with optimized channel mobility by processing only terrace facets or risers as needed.
• Integration into manufacturing processes of crystalline materials, such as silicon carbide, to fabricate devices with region-specific properties.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables self-aligned processing based on intrinsic surface features, reducing the need for complex masking.
• Improves performance of semiconductor devices by allowing selective treatment of areas with better material properties (e.g., terraces for higher mobility).
• Can be applied with various types of beams (light, electron, ion), making it flexible for different manufacturing setups.
• Potentially reduces manufacturing steps and associated costs by utilizing surface morphology for alignment.
• Enhances yield and device reliability by precisely targeting processing only where it is most effective.

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Patent Abstract

It is an objective of the present invention to provide a method for selectively processing the surface of a semiconductor substrate. This objective is achieved according to the present invention by a method to selectively process a surface of a substrate, preferably a semiconductor substrate, comprising the steps of: a) providing a substrate having an faceted surface defining sections with different surface orientation; b) applying a directional beam to the faceted surface thereby recording higher intensities of the directional beam into regions being oriented more perpendicular to the directional beam as compared to respective other sections being oriented less perpendicular to the directional beam; c) further selectively processing of the sections having received the higher intensities and/or of the section having received the lower intensities. This method enables the generation of 'self-aligned' sections which depend on the local morphology of the faceted surface. The term "faceted surface" refers to surfaces having well separated regions with different surface orientations with respect to the averaged surface of the substrate. This term also includes for example undulated surfaces. The differences of the angles between the vector normal of the surface of the substrate and the incident beam will deliver different average beam exposurein the different sections of the faceted surface.