Use of a Metal And/or Metalloid-Comprising Ketoacidoximate And/or a Metal-Compound-Comprising Ketoacidoximate As a Patterning Agent

Patent Abstract

The present invention relates to the use of a metal or metal-compound comprising ketoacidoximate as a patterning agent, preferably a photoresist agent, in photolithography and/or electron beam patterning. Preferably, the metal or metal-compound comprising ketoacidoximate has one of the following structural forms:wherein:R1 and R2 stand for hydrogen (H), organic compounds, such as aliphatic C1 to C10, aromatic, cyclic, polymerizable, such as acrylate, methacrylate, vinyl, etc., or a combination of these; andM stands for a central metal or metalloid atom that is attached to the ketoacidoximate group, and/or for a central metal atom being attached to other groups such as oxide, hydroxide, etc., or a central metal atom being attached to a further group R3 which is a carboxylate such as acetate, etc., a glycinate, a xanthate, an alkyl, an aryl, or the like.

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes the use of metal- or metalloid-containing ketoacidoximate compounds as patterning agents (specifically, advanced photoresist materials) for photolithography and electron beam lithography. These novel resists are particularly suitable for extreme ultraviolet (EUV) and electron beam patterning, providing high resolution, high sensitivity, and robust pattern fidelity. The resist materials can be tailored by modifying their organic and inorganic components, making them versatile for advanced semiconductor manufacturing and direct patterning of functional materials.

Use CasesContent extracted from patent full text and abstract with AI.

• Semiconductor chip fabrication using EUV lithography.
• Electron beam lithography for nanoscale device manufacturing.
• Production of high-resolution photomasks for the semiconductor industry.
• Creation of functional nanostructures for photonics applications (e.g., high-refractive index nanopatterns).
• Patterning materials for advanced sensors or catalysis applications.
• Sub-10 nm (and potentially sub-5 nm) lithography processes for next-generation integrated circuits.
• Direct patterning and etch masks in micro/nanofabrication workflows.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables higher sensitivity and better resolution at EUV wavelengths (13.5 nm) compared to traditional organic photoresists.
• Tailorable chemistry allows optimization for different processing needs and improved film properties.
• Capable of patterning features below 10 nm, with potential for sub-5 nm or even angstrom-scale patterns.
• Improved line edge roughness and pattern fidelity, critical for advanced device performance.
• Dual compatibility with both EUV and electron beam lithography systems.
• Forms robust etch masks due to their metal content, enhancing durability during subsequent etching processes.
• Potentially lower contamination risk for certain metals (e.g., aluminium) in semiconductor fabs.
• Universal scheme for metal/metalloid-functional patterning, enabling direct patterning of metal oxides or similar materials.

Technical Classifications (CPCs)

Inventors & Applicants