X-ray detector with integrating readout chip for single photon resolution

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This patent discloses an advanced X-ray detector featuring a two-dimensional array of photodiodes coupled to high-gain, low-noise charge integrating readout chips. Unlike traditional single photon counting detectors, this system integrates the charge generated by X-ray photons allowing for single-photon resolution without the pile-up and dead time limitations. The detector supports high photon count rates, continuous data acquisition, and improved spatial and energy resolution by digitally processing the integrated charge signals for each pixel.

Use CasesContent extracted from patent full text and abstract with AI.

• Medical imaging (e.g., advanced X-ray or CT scans requiring high speed and resolution)
• Material science and crystallography using synchrotron radiation or lab diffractometers
• Non-destructive testing and quality control in industrial applications
• High-throughput X-ray spectrometry and photon energy analysis
• Pump-probe experiments in physics and chemistry that need state-selective X-ray detection
• Security and baggage scanning systems requiring accurate, high-speed X-ray imaging

BenefitsContent extracted from patent full text and abstract with AI.

• Enables counting of very high photon rates without loss due to signal pile-up or readout dead time
• Allows single-photon resolution due to low electronic noise and high gain
• Provides continuous acquisition and readout, increasing detection efficiency and throughput
• Improves spatial resolution by interpolating photon positions absorbed in boundary regions between pixels
• Enables energy discrimination of X-ray photons for spectral imaging and background rejection
• Supports parallel or simultaneous measurements for experiments requiring comparison (e.g., pump and probe states)

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Patent Abstract

According to the present invention, an X-ray detector is disclosed, comprising: a) a layer of photosensitive material (4); b) an NxM array of photo-detector diodes (2) arranged in said layer of photosensitive material (4); each of said photo-detector diodes (2) having a bias potential interface (12) and a diode output interface, said bias potential interface (12) of each photo-detector diode (2) being connected to a bias potential (V bias ); c) an NxM array of high gain, low noise readout unit cells (RO), one readout unit cell (RO) for each photo-detector diode (2); d) each readout unit cell (RO) comprising: d1) an input interface (IN) connected to said diode output interface, a high-gain voltage amplifying means (PA) comprising an integration capacitor (C fb ), d2) a first switch (S1) in parallel to the integration capacitor (C fb ), d3) a sample/hold capacitor (C S ) disposed between a second switch (S2) and third switch (S3), wherein the sample/hold capacitor (C S ) is connectable to an output (OUT) of the high-gain voltage amplifying means (PA) via the second switch (S2) and is connectable to a signal output line (SO) via the third switch (S3); e) a multiplexing means (MM) comprising a row select and a column select circuit allowing to access each readout cell unit (RO), i.e. to read out the analog signal as actually stored in the sample/hold capacitor (C S ) to a data processing means (DPM) controlling the multiplexing means.