Current driven magnetic domain wall logic

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention describes a new type of spin-based logic circuit that uses magnetic domain wall motion controlled by electric current to perform logic operations. Unlike previous designs needing external magnetic fields for domain wall manipulation, this approach uses only electric currents to control logic gates, enabling both computation and non-volatile data storage within the same device. It demonstrates configurable logic gates (such as NAND, NOR, XOR, and full adders), providing an all-electric, scalable solution for future computing architectures.

Use CasesContent extracted from patent full text and abstract with AI.

• Non-volatile memory and logic circuits for next-generation computers
• Energy-efficient processing units for mobile devices and IoT hardware
• Integration into spintronic-based processors and memory systems
• High-density, low-leakage computing hardware for data centers
• Logic and memory fusion (logic-in-memory) chips for artificial intelligence and machine learning applications

BenefitsContent extracted from patent full text and abstract with AI.

• Enables non-volatile data retention, reducing energy consumption and improving reliability
• Eliminates the need for external magnetic fields, making implementation simpler and more scalable
• Allows for high-density and flexible chip designs, supporting advanced circuit integration
• Reduces leakage currents, leading to more energy-efficient computing hardware
• Supports the creation of fully electric, reconfigurable logic circuits compatible with advanced technological roadmaps beyond traditional CMOS technology

Inventors & Applicants

Patent Abstract

A spin-based logic architecture provides non-volatile data retention, near zero leakage, and scalability, extending technical roadmaps out of complementary metal oxide semiconductor (CMOS) logic. Magnetic domain wall-based architectures utilize fast domain wall motion, high density, non-volatile, and flexible design to process and store information. However, this approach relies on domain wall manipulation and clocking using an external magnetic field, which limits their implementation in dense large scale chips. The invention discloses a concept of performing all-electric logic operations and cascading in a domain wall runway. According to the method, a magnetic domain wall reverser and a basic building block in all implementation of Boolean logic are realized by utilizing chiral coupling between adjacent magnetic domains caused by interaction of interface Dzyaloshiski-Moriya. Reconfigurable NAND and NOR logic gates are also disclosed, and operations are performed by current induced domain wall motion. Finally, a number of NAND gates are cascaded to construct an XOR gate and a full adder gate, thereby demonstrating electrical control of magnetic data and device interconnects in a logic circuit. According to the invention, a feasible platform is provided for extensible full-electromagnetic logic, and a way is laid for application of logic memories.