Semiconductor component with micro-bridges for adjusting a tensile elongation condition and method for producing same

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This invention relates to a semiconductor component that uses micro-bridge structures with modulated cross-sections, formed in pre-strained layers (e.g., germanium or silicon on insulator substrates), to locally enhance tensile strain in specific regions. By lithographically defining and etching these micro-bridges, and then under-etching to release them from the substrate, very high local strain can be achieved, which alters the electronic and optical properties of the semiconductor. This enables new device functionalities, such as creating direct bandgap semiconductors for lasers or improving charge carrier mobility for faster transistors.

Use CasesContent extracted from patent full text and abstract with AI.

• Development of highly efficient silicon-compatible lasers for optical communication and photonics integration on chips
• Fabrication of transistors with enhanced electron mobility for faster and lower-power integrated circuits (CMOS technology)
• Production of advanced optical modulators and detectors for on-chip photonic networks
• Creation of highly sensitive sensors based on strain-engineered semiconductor properties
• Integration of quantum well or quantum cascade devices in standard silicon chip technology
• Manufacturing of high-efficiency solar cells exploiting selective band structure tuning

BenefitsContent extracted from patent full text and abstract with AI.

• Enables local, high, and tunable tensile strain in semiconductors, surpassing traditional methods
• Allows for the realization of direct bandgap semiconductors (e.g., strained germanium), making on-chip laser sources possible
• Enhances electron and hole mobility in semiconductor channels for improved transistor performance
• Compatible with established silicon technology (CMOS, SOI), facilitating large-scale adoption
• Offers new degrees of freedom to engineer electronic, optical, and quantum properties of devices
• Simplifies and improves fabrication processes for strain engineering compared to complex multi-material or external force methods
• Can be applied to a wide range of materials and device architectures, supporting future electronics and photonics innovation

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Inventors & Applicants

Patent Abstract

The semiconductor component has an insulator substrate such as silicon germanium substrate on which an elongation layer is formed. A free-standing cross-intersecting bridge structure is formed in the elongation layer of substrate by lithography and etching process. The bridge structure is undercut by a window. An independent claim is included for manufacturing method of semiconductor component.