Method for Structuring a Diamond Wire Sawn Multicrystalline Silicon Wafer and Method for Manufacturing a Solar Cell

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This patent describes a method for texturing the surface of a diamond wire-sawn, multicrystalline silicon wafer using two sequential wet chemical etching processes with acidic solutions. The approach aims to generate an etched, pit-like structure on the wafer's surface. This method can also be used as a step in manufacturing a solar cell.

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• Improving the efficiency of multicrystalline silicon solar cells by optimizing wafer surface texturing
• Manufacturing more effective photovoltaic cells for solar panels
• Processing of silicon wafers for use in various semiconductor devices

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• Enhances light absorption in silicon wafers, potentially increasing solar cell efficiency
• Provides a controlled and reproducible surface structure for mass production
• Can minimize surface defects and improve the overall quality of the wafer during manufacturing

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Patent Abstract

Gemäß verschiedenen Ausführungsformen kann ein Verfahren (100) zum Strukturieren eines diamantdrahtgesägten, multikristallinen Siliziumwafers (202) folgendes aufweisen:ein erstes nasschemisches Ätzen einer Oberfläche (202a) des diamantdrahtgesägten, multikristallinen Siliziumwafers (202) in einer ersten sauren Ätzlösung; anschließend ein zweites nasschemisches Ätzen der Oberfläche (202a) des diamantdrahtgesägten, multikristallinen Siliziumwafers (202) in einer zweiten sauren Ätzlösung zum Erzeugen einer Ätzgrubenstruktur an der Oberfläche (202a).