Manufacturing Process for a High Nitrogen Content Spinel-AlON Ceramic, Materials Produced Therewith, and Doped Materials

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This invention describes a method for producing spinel-structured aluminum oxynitride (ALON) ceramics with a high nitrogen content. The process involves reacting an Al-O-N precursor material at high temperatures (1700°C or above) and extremely high pressure (4 GPa or more), resulting in ALON materials with fewer charge-compensating cation vacancies than previous methods. The process can also produce nearly ideal stoichiometric ALON as well as doped ALON materials.

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• Manufacturing advanced transparent armor for military vehicles and aerospace applications
• Production of durable, transparent windows for harsh environments such as deep-sea or space exploration vehicles
• Creating optical components like lenses and windows for high-performance sensors and cameras
• Development of wear-resistant and corrosion-resistant ceramic parts in electronics and industrial machinery
• Use in high-strength, lightweight transparent protective enclosures

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• Enables production of ALON ceramics with improved structural properties and purity
• Allows for manufacturing of ALON with nearly perfect stoichiometry, increasing its transparency and durability
• Reduces the number of undesirable cation vacancies, improving the material's performance
• Expands the range of possible applications by enabling both undoped and doped (customized) ALON materials
• May provide better manufacturing efficiency and scalability for high-performance ceramic components

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Patent Abstract

Die Erfindung betrifft die Herstellung von Aluminiumoxidnitrid mit Spinellstruktur („ALON“) durch Umsetzen eines Al-O-N-Precursormaterials bei einer Temperatur von 1700°C oder höher und einem Druck von 4 GPa oder höher. Durch das erfindungsgemäße Verfahren kann ALON mit einer gegenüber dem Stand der Technik verringerten Anzahl an ladungsausgleichenden Kationenleerstellen in der Spinellstruktur erhalten werden. In einigen Fällen kann ein ALON mit Spinellstruktur in nahezu idealer stöchiometrischer Zusammensetzung erhalten werden (stöchiometrisches Al3O3N). Das erfindungsgemäße Verfahren kann auch für die Herstellung dotierter ALON-Materialien eingesetzt werden.