Method for Processing Saw Residues from Silicon Wafer Production
Simple SummaryContent extracted from patent full text and abstract with AI.
This invention provides a process for recycling saw residues generated during silicon wafer production. The method involves separating polyethylene glycol from the residues, chemically treating the solid parts to convert them into valuable methylchlorosilanes, and separating silicon carbide. The process enhances material recovery and purification using a combination of chemical treatments and distillation steps.
Use CasesContent extracted from patent full text and abstract with AI.
- Recycling and recovery of valuable materials from silicon wafer production waste
- Production of methylchlorosilanes, which are precursors for silicones and other chemicals
- Waste minimization and material reuse in semiconductor manufacturing plants
- Processing of industrial saw residues containing polyethylene glycol and silicon compounds
BenefitsContent extracted from patent full text and abstract with AI.
- Reduces waste and environmental impact from silicon wafer manufacturing
- Recovers useful chemicals (methylchlorosilanes) and materials (silicon carbide) from industrial residues
- Lowers raw material costs by recycling components from waste
- Supports sustainable and circular economy practices in the semiconductor industry
- Improves purification and separation efficiency of materials during processing
Technical Classifications (CPCs)
Main Classifications
Chemistry & Materials Science
Manufacturing & Transport
Sub Classifications
Grinding & Polishing
Organic Chemistry
CPC Codes
Inventors & Applicants
Applicants
Univ Freiberg Tech Bergakademie
Patent Abstract
Processing saw residues from the production of silicon wafers, comprises mechanically separating polyethylene glycol from solid components of saw residues, treating the solid components with chloromethane and/or dichloromethane and hydrogen in presence of Muller Rochow synthesis catalyst at a temperature of 350-650[deg] C to form gaseous methylchlorosilanes, performing distillation of the gaseous methylchlorosilanes to separate silicon carbide under oxidizing atmosphere at temperature of 680-750[deg] C, and placing the product in a reactor and then heating up and subjecting to acid wash to classify.
Key Information
Publication No.
DE102012015417B4
Family ID
49943816
Publication Date
2018-08-16
Application No.
DE102012015417A
Application Date
2012-08-02
Priority Date
2012-08-02
Granted
Yes (1/2)
Possible Cooperation
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