Method for Producing a Component

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention discloses a method for manufacturing high-quality electrical and/or optical components, such as transistors, lasers, LEDs, or photodetectors, by etching one or more trenches into a substrate (like silicon) and then laterally growing at least one semiconductor layer to cover the trench, thus forming gas-filled cavities beneath the active regions. These cavities prevent crystal misalignments and unwanted electrical or optical interference from the substrate, resulting in improved device performance and reliability.

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• Manufacturing high-efficiency LEDs and laser diodes for displays, lighting, or optical communications.
• Producing high-speed, low-loss optical waveguides for integrated photonics.
• Fabricating low-parasitic-capacitance transistors for high-frequency electronic circuits.
• Enabling integrated optoelectronic devices (combining electronic and photonic functions) on silicon substrates.
• Development of advanced photodetectors for optical sensing and imaging systems.

BenefitsContent extracted from patent full text and abstract with AI.

• Reduces crystal defects and dislocations in semiconductor layers, leading to improved device efficiency and longevity.
• Prevents electrical and optical coupling to the substrate, reducing parasitic capacitance, interference, and losses.
• Supports integration of light-emitting or detecting components directly above insulating cavities, enhancing performance.
• Allows for the use of cost-effective silicon substrates for high-performance optoelectronic devices.
• Improved thermal management and isolation by carefully designing the size and layout of gas-filled cavities.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a method for producing an electrical and/or optical component. The aim of the invention is to attain a particularly good quality of the component and, in particular, to reliably prevent crystal offsettings in the material layers of the component. To this end, the invention provides a method for producing a component (70, 300, 405) during which at least one trench (30) is etched into a substrate (10). At least one semiconductor layer (50) is laterally grown over said trench so that the trench is completely covered by the semiconductor layer while forming a gas-filled, in particular, air-filled cavity (60). The component is integrated in the semiconductor layer or in an additional semiconductor layer applied to the first semiconductor layer, the active region of the component being located above the cavity.