Vertical-cavity surface-emitting laser
Simple SummaryContent extracted from patent full text and abstract with AI.
This patent describes an improved vertical-cavity surface-emitting laser (VCSEL) in which a carefully controlled additional layer is deposited on top of the laser's upper mirror stack (the output side). The thickness and refractive index of this additional layer are selected to optimize a specific design parameter, leading to improved modulation bandwidth, energy efficiency, and output power. Uniquely, this optimization can be achieved without destructive or complex etching processes, making production simpler, more robust, and suitable for large-scale manufacturing.
Use CasesContent extracted from patent full text and abstract with AI.
- High-speed optical data communication in data centers and supercomputers.
- Short-reach interconnects between servers or networking equipment.
- Optical sensing, LiDAR, and 3D imaging systems where fast and efficient lasers are required.
- High-efficiency optical communication transceivers for telecommunications and cloud computing.
- Consumer electronics requiring miniature, energy-efficient laser components.
BenefitsContent extracted from patent full text and abstract with AI.
- Enables higher data transmission rates due to increased modulation bandwidth.
- Reduces energy consumption per transmitted bit, making data centers and networks more efficient.
- Boosts output power, which can enable smaller device footprints and improved system integration.
- Eliminates the need for destructive or complex etching, improving yield and reliability during manufacturing.
- Allows for precise, repeatable, and low-cost optimization and fabrication of VCSEL devices.
- Adaptable fabrication compatible with mass production and existing semiconductor processes.
Technical Classifications (CPCs)
Main Classifications
Electrical & Electronic Tech
Sub Classifications
Electric Elements
CPC Codes
Inventors & Applicants
Applicants
Univ Berlin Tech
Patent Abstract
A vertical cavity surface emitting laser comprising a first reflector, a second reflector comprising a layer stack of semiconductor or isolating layers, an active region arranged between the first and second reflectors, and an additional layer on top of the layer stack at the light output side, said additional layer forming an output interface of the laser, wherein the refractive index of the additional layer is smaller, equal to or larger than the smallest refractive index of the refractive indices of said layer stack.
Key Information
Publication No.
US9979158B1
Family ID
61027693
Publication Date
2018-05-22
Application No.
US201715404786A
Application Date
2017-01-12
Priority Date
2017-01-12
Granted
Yes (3/6)
Possible Cooperation
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