Layer Assembly

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a method for fabricating precise arrangements of nanostructures (such as quantum dots or photon emitters) on a layered semiconductor assembly. Instead of using complex and potentially damaging nanolithography, the method locally modifies a buried layer to create mechanical strain in an upper layer. This strain precisely dictates where nanostructures form when a strain-sensitive material is deposited—enabling defect-free and deterministic placement of nanostructures on the surface.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacture of highly efficient single photon sources for quantum communication and computing.
• Development of advanced optoelectronic devices such as lasers, LEDs, and quantum dot devices.
• Fabrication of nano-scale sensors or detector arrays with controlled positioning.
• Enabling defect-free nanostructures for photonic circuits and on-chip quantum technologies.
• Production of precisely located nanostructures for research and development in nanotechnology.

BenefitsContent extracted from patent full text and abstract with AI.

• Allows deterministic and highly precise placement of nanostructures without complex, damage-prone lithography.
• Enables fabrication of nanostructures on unstructured, defect-free surfaces, leading to higher device performance.
• Improves current injection efficiency and device alignment through self-aligned apertures and strain-guided growth.
• Reduces manufacturing complexity and cost by eliminating the need for nanoscale pre-patterning.
• Provides versatility in device design by allowing different shapes and arrangements through strain engineering.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention inter alia relates to a method of fabricating a layer assembly comprising the steps of: arranging a first layer on top of a carrier; arranging a second layer on top of the first layer; locally modifying the material of the buried first layer and providing at least one modified section in the first layer, wherein the modified material changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section; after locally modifying the material of the buried first layer, depositing a third material on top of the second layer, at least one characteristic of the third material being sensitive to the local mechanical strain in the second layer.