Photon Pair Source and Method for Its Production

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a method and device for producing a photon pair source capable of generating entangled photon pairs using quantum dots. The core innovation is that the quantum dots are deposited on a semiconductor substrate with a {111} crystal orientation, which allows highly accurate and reproducible adjustment (minimization) of the fine structure splitting of the excitonic energy levels. This leads to a reliable source of entangled photon pairs, which are important for quantum technologies.

Use CasesContent extracted from patent full text and abstract with AI.

• Quantum key distribution for secure communications (quantum cryptography)
• Fundamental research in quantum mechanics and quantum entanglement
• Components for quantum computing systems
• Sources for quantum-enhanced metrology or sensing
• Integration into photonic networks or quantum communication infrastructure

BenefitsContent extracted from patent full text and abstract with AI.

• Highly reliable production of entangled photon pairs due to minimized fine structure splitting
• Improved reproducibility and simplicity compared to previous methods
• Enhanced security for quantum cryptography applications
• Scalability for fabrication of many identical sources
• Ability to tailor material and shape properties to specific quantum applications

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a method for the production of a photon pair source, which generates entangled photon pairs, having at least one quantum dot, wherein in the method the operational behaviour of the photon pair source is determined by adjusting the fine structure splitting of the excitonic energy level of the at least one quantum dot. It is provided according to the invention for the fine structure splitting of the excitonic energy level to be adjusted by depositing the at least one quantum dot on a {111} crystal surface of a semiconductor substrate.