Method of fabricating semiconductor quantum dots

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention provides a method for precisely fabricating semiconductor quantum dots at specified positions on a substrate. The process uses nanoimprint lithography to pattern nano-holes at defined locations and then grows quantum dots within these holes using metalorganic chemical vapor deposition (MOCVD). This combination enables large-area, highly uniform, and well-ordered arrays of quantum dots with excellent site control and scalability.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing of quantum dot lasers and light-emitting diodes (LEDs)
• Production of single-photon emitters for quantum communication and computing
• Integration into quantum dot memory devices
• Fabrication of high-efficiency quantum-dot-based solar cells
• Creation of highly sensitive infrared photodetectors
• Development of nanoelectronic and optoelectronic devices requiring precise quantum dot positioning
• Mass production of uniform quantum dot arrays for research and commercial applications

BenefitsContent extracted from patent full text and abstract with AI.

• Enables large-area, site-controlled and highly uniform quantum dot arrays
• Allows for both high-density and low-density (single) quantum dot arrangements on the same substrate
• Provides precise control over quantum dot size, shape, position, and ordering
• Reduces production cost and increases throughput using scalable, low-cost patterning (UV-nanoimprint lithography)
• Overcomes the non-uniformity and randomness of prior self-assembly approaches
• Improves the performance and integration potential of quantum dot-based devices
• Suitable for mass production, accelerating commercial adoption of quantum dot technologies

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a method of fabricating at least one semiconductor quantum dot at a predefined position, comprising the steps of: patterning a semiconductor base material using nanoimprint lithography and an etching step, to form at least one nano-hole at the predefined position in the semiconductor base material; and growing the at least one semiconductor quantum dot in or on top of the at least one nano-hole by metalorganic chemical vapor deposition.