Metal Chalcogenide Thin Layer Electrode, Method for Production Thereof and Use Thereof

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This invention describes a method for producing metal chalcogenide thin-layer electrodes, which involves treating a metal or metal oxide with a halogen in a non-aqueous solvent to make a metal halogenide, then depositing the metal onto a conductive substrate under negative voltage, and finally exposing the substrate to a chalcogen (like oxygen, sulfur, or selenium) to form a metal chalcogenide layer. The resulting electrode is highly stable and efficient at catalyzing the oxygen evolution reaction, especially in (photo)electrochemical water-splitting applications for hydrogen production.

Use CasesContent extracted from patent full text and abstract with AI.

• Anode material in water electrolysis cells for efficient oxygen evolution.
• Photoanodes for solar-driven water-splitting to produce hydrogen fuel.
• Electrocatalytic electrodes in fuel cell systems.
• Photoelectrochemical devices for sustainable energy generation.
• Electrocatalyst for use in industrial hydrogen production processes.
• Protective, stable coatings on semiconductor substrates in harsh chemical environments.

BenefitsContent extracted from patent full text and abstract with AI.

• Simplifies the production of robust, high-performance metal chalcogenide electrodes.
• Uses inexpensive, available starting materials, including scrap metals, making the process cost-effective and sustainable.
• Produces electrodes that are stable, dense, and can include carbon for enhanced mechanical and electronic properties.
• Enables the use of photoactive substrates, allowing integration in solar-driven processes.
• Avoids hazardous precursors (e.g., toxic hydrogen sulfide) for sulfide production, making the process safer and more environmentally friendly.
• Improved catalytic activity for the oxygen evolution reaction, enhancing overall electrolysis and hydrogen production efficiency.

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Patent Abstract

The invention relates to a method for producing a metal chalcogenide thin layer electrode, comprising the steps: (a) bringing a metal or metal oxide into contact with an elementary halogen in a non-aqueous solvent, generating a metal halogenide bond in the solution, (b) connecting a negative electrical voltage to an electrically conductive or semiconductive substrate which is in contact to the solution from step (a), and (c) during and/or after step (b), bringing the substrate into contact with an elementary chalcogen, forming a metal chalcogenide layer on the substrate. The invention furthermore relates to a metal chalcogenide thin layer electrode which can be produced by the method and use thereof as an anode for oxygen release in (photo)electrochemical water-splitting.