Device Comprising a High Brightness Broad-Area Edge-Emitting Semiconductor Laser and Method of Making the Same

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This patent discloses a high-brightness, broad-area edge-emitting semiconductor laser with a novel multi-layered waveguide structure. The invention introduces aperiodic sequences of layers with varying refractive indices and doping profiles to selectively expand and confine the fundamental optical mode while increasing the losses for higher order modes. As a result, the laser achieves high power output with a single, narrow-divergence beam, providing efficient, high-quality brightness better than conventional designs. The patent also covers methods for making such devices.

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• Industrial material processing (cutting, welding, engraving) where high power and beam precision are needed
• Optical pumping sources for fiber, solid-state, or other lasers in scientific and telecommunications applications
• Free-space optical communication systems
• Medical laser therapies and procedures
• Lidar systems for autonomous vehicles, mapping, and environmental monitoring
• Laser printing and high-resolution imaging
• Scientific instrumentation requiring precise, high-brightness laser sources

BenefitsContent extracted from patent full text and abstract with AI.

• Dramatically increased brightness compared to conventional edge-emitting lasers
• Efficient single-mode operation with narrow beam divergence, reducing or eliminating need for external beam-shaping optics
• Higher tolerance to manufacturing imperfections and operational variations (thickness, composition, temperature)
• Improved resistance to thermal and optical damage at higher output powers
• Customizable for different wavelengths (infrared, red, visible, UV) and semiconductor material systems
• Potential for reduced system cost due to simplified optics and increased power

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Patent Abstract

Device comprising a high brightness broad-area edge-emitting semiconductor laser and method of making the same. The device includes an edge-emitting semiconductor laser, said laser having a multi-layered waveguide, and said waveguide comprising at least one layer with an active region that emits light under electrical injection, and at least one aperiodic layer stack.