Uv Led with Tunnel-Injection Layer

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a new ultraviolet (UV) LED structure that includes a high-aluminum-content AlN or AlGaN layer between the active region and the p-type layers. This layer is specifically designed to allow holes to tunnel efficiently while also blocking unwanted electrons from leaking out of the active region, thereby improving the performance of the UV LED.

Use CasesContent extracted from patent full text and abstract with AI.

• Germicidal lamps for disinfecting water, air, and surfaces
• Medical sterilization devices using UV light
• UV curing systems for inks, coatings, and adhesives
• Analytical instruments that require UV light emission
• UV-based forensic analysis and counterfeit detection
• Industrial sensing and inspection systems using UV light
• Advanced phototherapy devices for skin treatments

BenefitsContent extracted from patent full text and abstract with AI.

• Increases the efficiency of UV LEDs by improving hole injection and reducing electron leakage
• Enhances device performance and lifetime due to better carrier management
• Enables production of more reliable and powerful UV LEDs for industrial and medical applications
• Improves energy conversion efficiency, resulting in lower power consumption
• Facilitates the manufacture of UV LEDs operating at shorter wavelengths due to high-aluminum-content layers

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Patent Abstract

An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone.