Semiconductor Device Having an Internal-Field-Guarded Active Region

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This patent describes a new semiconductor device structure that embeds an 'active region' (such as a quantum well, quantum dot, or quantum wire) between specially designed 'polarization guard layers.' These layers partially shield the active region from internal electric fields created by differences in material composition, thus improving the efficiency of devices such as LEDs, laser diodes, and photodetectors. The guard layers are made from materials with band gap energies positioned between those of the active region and the surrounding confinement layers, offering an optimal tradeoff between quantum efficiency and photon transparency.

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• Light-emitting diodes (LEDs) with higher internal quantum efficiency and improved light output for visible and ultraviolet applications.
• Laser diodes, including those operating at short wavelengths (e.g., blue or UV lasers) for data storage, communications, or medical equipment.
• Single-photon or entangled-photon sources for quantum computing and secure communications.
• High-sensitivity photodetectors or optical sensors for imaging and spectroscopy.
• Efficient optoelectronic devices for display technologies and solid-state lighting.
• High-performance transistors or electronic switches benefiting from improved charge carrier confinement.

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• Significantly increased internal quantum efficiency by reducing the separation of electrons and holes (improved overlap of their wave functions).
• Reduces undesirable effects from strong polarization fields (Quantum Confined Stark Effect), such as spectral line broadening and reduced luminescence.
• Achieves a near-flat band condition in the active region, which enhances optical transition probability and output.
• Enables higher light emission intensity and detection sensitivity in optoelectronic devices.
• Provides flexible device design using mature epitaxial growth methods and standard substrates, reducing manufacturing complexity and cost.
• Minimizes light absorption in polarization guard layers, allowing more efficient transmission or emission of photons.
• Enhanced wavelength stability and reduced sensitivity to variations in layer thickness or material defects.

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Patent Abstract

A semiconductor device comprises a layer sequence formed by a plurality of polar single crystalline semiconductor material layers that each has a crystal axis pointing in a direction of crystalline polarity and a stacking direction of the layer sequence. A core layer sequence is formed by an active region made of an active layer stack or a plurality of repetitions of the active layer stack. The active layer stack has an active layer having a first material composition associated with a first band gap energy, and carrier-confinement layers embedding the active layer on at least two opposite sides thereof, having a second material composition associated with a second band gap energy larger than the first band gap energy. A pair of polarization guard layers is arranged adjacent to the active region and embedding the active region on opposite sides thereof.