Electrically Variable Impedance Matching Network for an Hf Power Transistor

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes an electrically tunable impedance matching network integrated within the housing of a high-frequency (HF) power transistor. The core innovation allows for dynamic and adaptive adjustment of both input and output impedances, enabling efficient operation across multiple or wide frequency bands. The network uses electrically adjustable components such as ferroelectric materials, RF-MEMS, or semiconductor devices, which can be controlled independently from the signal power supply.

Use CasesContent extracted from patent full text and abstract with AI.

• Base stations in cellular/mobile communication networks requiring flexible power transistors for various frequency bands.
• Power amplifiers in mobile phones that need to adapt to changing operating conditions or different network standards.
• High-frequency amplifiers in other communication devices needing broadband or multiband adaptability.
• Military or cognitive radio systems that benefit from real-time impedance adaptation to environment and signal conditions.
• Software-defined radios that require hardware-level agility to match varying frequencies and loads.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables a single transistor component to support multiple frequency bands, reducing the need for different hardware versions.
• Allows adaptive matching for maximum energy efficiency, particularly important for power amplifiers in communication infrastructure.
• Improves back-off efficiency through dynamic load modulation, leading to better performance at lower output power levels.
• Facilitates self-adjusting or 'intelligent' RF transistors that can respond to real-time changes in signal power, environment, or load.
• Can lead to simpler RF system design and potentially lower costs due to reduced external components and increased integration.
• Maintains high linearity and performance across a wide frequency range by employing advanced tunable components.
• Enables new applications in cognitive and software-defined radios, where real-time adaptation and flexibility are essential.

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Patent Abstract

The invention relates to an electrically variable impedance matching network within the housing of an HF power transistor. The invention is used primarily for HF power transistors in base stations of mobile radio networks; it can also be used in amplifiers for mobile subscribers (e.g. in mobile telephones) and in HF amplifiers for other applications. The problem addressed by the invention is that of enabling dynamic variability of the load and source impedance and making the transistor more easily adaptable. In addition, a multiband/broadband working method and a dynamic load modulation for increased back-off efficiency is to be enabled.