Memory Cell

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention concerns a novel semiconductor memory cell that can store binary information by holding either electrons or holes in a quantum well or quantum dot structure. The presence of either type of charge carrier (holes or electrons) encodes the bit value. The cell features an injection mechanism to selectively add or remove electrons or holes, thus enabling fast rewriting, and a readout structure that determines the stored bit by measuring the type of charge present. Unlike prior memory cells, it allows for both long retention times and fast (nanosecond-scale) writing and erasing, all at low voltage and energy.

Use CasesContent extracted from patent full text and abstract with AI.

• Next-generation non-volatile memory in computers and servers
• High-performance embedded memory for mobile devices and IoT applications
• Data storage in edge computing and artificial intelligence processors
• Energy-efficient memory for battery-powered electronics
• Storage for harsh environments where reliability and low power are critical

BenefitsContent extracted from patent full text and abstract with AI.

• Combines long data retention (like Flash) with fast write/erase times (like DRAM), overcoming key industry tradeoffs.
• Requires only low write/erase voltages (below 2V), reducing energy consumption and heat generation.
• Improves endurance and lifetime thanks to low electric fields, which minimize wear and defects compared to Flash.
• Enables faster and more energy-efficient memory solutions for a broad range of electronics.
• Potential for high-density integration using quantum dot structures.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates, inter alia, to a memory cell (10) comprising at least one binary memory area for storing an item of bit information. According to the invention, it is provided that the memory area (SB) can optionally store holes or electrons and allows a recombination of holes and electrons, the charge carrier type of the charge carriers stored in the memory area defines the bit information of the memory area and a charge carrier injection device (PN) is present, by means of which optionally holes or electrons can be injected into the memory area (SB) and the bit information can thus be changed.