Laser-Induced Crack Patterning for Precise Layer Structuring

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The patent describes a method for structuring thin layers by stacking two different material layers, then using pulsed light to create controlled mechanical stress at the edge of one layer, which induces a crack in the lower layer exactly at the desired location. This process allows precise structuring and separation of layers in semiconductor and electronic applications without traditional mechanical or chemical methods.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing of microelectronic components such as transistors and integrated circuits.
• Producing microscale sensor devices where precise layer separation is essential.
• Fabrication of semiconductor wafers and chips with complex multilayer structures.
• Creating electronic display panels that require patterned thin films.

BenefitsContent extracted from patent full text and abstract with AI.

• Enables highly precise structuring of material layers without traditional etching or machining.
• Reduces chemical waste and processing steps compared to conventional structuring methods.
• Minimizes mechanical damage to delicate materials, improving device reliability and yield.
• Offers scalability and compatibility with existing semiconductor manufacturing processes.

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Patent Abstract

A method for structuring a layer comprises providing a layer stack comprising a first layer comprising a first material and a second layer comprising a second material, wherein the layer stack is produced such that at least a first surface edge of the second layer is arranged on a surface region of the first layer. The method comprises illuminating the layer stack with a pulsed light source, so that a portion of light emitted by the pulsed light source is absorbed by the layer stack and a conversion of the portion into thermal energy takes place. By the conversion, mechanical stress is generated in the first layer and the second layer, so that a crack is generated in the first layer in a region of the surface edge of the second layer, so that the structuring of the first layer is obtained.