Multilayer Dielectric Stack with Low-k and High-k Layers for Electronic Components

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Publication: DE102014107850A1
Published: 2015-12-17
Family Size: 1
Granted: No

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention relates to an electronic component with a dielectric material formed by stacking three distinct layers: a first low-k (low dielectric constant) layer, a second high-k (high dielectric constant) layer, and a third intermediate layer with any dielectric constant between them. The patent also covers a manufacturing method for making such components, particularly useful for organic field effect transistors or thin-film capacitors.

Use CasesContent extracted from patent full text and abstract with AI.

  • Organic field effect transistors (OFETs) with improved dielectric performance
  • Thin-film capacitors for compact electronic circuits
  • Flexible electronic devices where layered dielectrics enhance performance
  • Advanced integrated circuits requiring optimized dielectric layers
  • Wearable electronics needing high-reliability dielectric components

BenefitsContent extracted from patent full text and abstract with AI.

  • Enables tailored dielectric properties by combining low-k, high-k, and customizable layers
  • Improves electrical performance and stability of electronic devices
  • Offers flexibility in material and design for various electronic applications
  • Can reduce leakage currents and enhance reliability in thin-film electronics
  • Potential for reducing component size while maintaining or improving performance

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Sub Classifications

Semiconductor & Solid-State Devices

CPC Codes

H10K10/476H10K10/478

Inventors & Applicants

Applicants

Tech Universität Chemnitz

Patent Abstract

The invention relates to an electronic component with a dielectric (D) and a method for manufacturing the electronic component, in particular an organic field-effect transistor or thin-film capacitor, wherein the dielectric (D) comprises at least a first layer (1) in the form of a low-k layer and at least a second layer (2) in the form of a high-k layer, and according to the invention a third layer (3) with arbitrary dielectric constant is arranged between the first layer (1) and the second layer (2). According to the method, the first layer (1), a third layer (3) with arbitrary dielectric constant and the second layer (2) are applied one on top of the other and thereby the dielectric (D) is produced as a composite of three individual layers brought into contact with one another.

Key Information

Publication No.

DE102014107850A1

Family ID

54706141

Publication Date

2015-12-17

Application No.

DE102014107850A

Application Date

2014-06-04

Priority Date

2014-06-04

Granted

No

Possible Cooperation

For further information please contact the transfer office.