Multilayer Dielectric Stack with Low-k and High-k Layers for Electronic Components
AISimple SummaryContent extracted from patent full text and abstract with AI.
This invention relates to an electronic component with a dielectric material formed by stacking three distinct layers: a first low-k (low dielectric constant) layer, a second high-k (high dielectric constant) layer, and a third intermediate layer with any dielectric constant between them. The patent also covers a manufacturing method for making such components, particularly useful for organic field effect transistors or thin-film capacitors.
Use CasesContent extracted from patent full text and abstract with AI.
- Organic field effect transistors (OFETs) with improved dielectric performance
- Thin-film capacitors for compact electronic circuits
- Flexible electronic devices where layered dielectrics enhance performance
- Advanced integrated circuits requiring optimized dielectric layers
- Wearable electronics needing high-reliability dielectric components
BenefitsContent extracted from patent full text and abstract with AI.
- Enables tailored dielectric properties by combining low-k, high-k, and customizable layers
- Improves electrical performance and stability of electronic devices
- Offers flexibility in material and design for various electronic applications
- Can reduce leakage currents and enhance reliability in thin-film electronics
- Potential for reducing component size while maintaining or improving performance
Technical Classifications (CPCs)
Main Classifications
Electrical & Electronic Tech
Sub Classifications
Semiconductor & Solid-State Devices
CPC Codes
Inventors & Applicants
Applicants
Tech Universität Chemnitz
Patent Abstract
The invention relates to an electronic component with a dielectric (D) and a method for manufacturing the electronic component, in particular an organic field-effect transistor or thin-film capacitor, wherein the dielectric (D) comprises at least a first layer (1) in the form of a low-k layer and at least a second layer (2) in the form of a high-k layer, and according to the invention a third layer (3) with arbitrary dielectric constant is arranged between the first layer (1) and the second layer (2). According to the method, the first layer (1), a third layer (3) with arbitrary dielectric constant and the second layer (2) are applied one on top of the other and thereby the dielectric (D) is produced as a composite of three individual layers brought into contact with one another.
Key Information
Publication No.
DE102014107850A1
Family ID
54706141
Publication Date
2015-12-17
Application No.
DE102014107850A
Application Date
2014-06-04
Priority Date
2014-06-04
Granted
No
Possible Cooperation
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