Ruthenium Precursor Compounds for Depositing Thin Ruthenium Layers by Gas Phase

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This invention introduces new ruthenium precursors—chemical compounds used to deposit thin layers of ruthenium or ruthenium-containing materials through a process called vapor deposition. The patent details the composition of these precursors and provides methods for their synthesis and application in creating high-quality ruthenium coatings.

Use CasesContent extracted from patent full text and abstract with AI.

• Production of thin ruthenium films for semiconductor devices
• Manufacturing of microelectronic components requiring ruthenium layers
• Surface coating of materials in automotive or aerospace industries
• Development of catalytic layers in chemical processing equipment
• Creation of efficient electrical contacts or electrodes

BenefitsContent extracted from patent full text and abstract with AI.

• Enables precise and uniform deposition of ruthenium layers
• Offers new chemical compositions for better performance and stability during deposition
• Potential for improved coating quality in advanced manufacturing
• Supports miniaturization of electronic components
• Can enhance durability and efficiency of coated devices

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Inventors & Applicants

Patent Abstract

The present invention relates to novel ruthenium precursors for the deposition of ruthenium layers, their preparation, and a method for the deposition of thin ruthenium layers or ruthenium-containing layers by means of gas phase deposition. The ruthenium precursors for the deposition of ruthenium layers according to the invention contain compounds of the general formula Ru(CO)2L2(O2CR1)(O2CR2) wherein ligands L are identical or different two-electron pair donors, selected from phosphane, phosphite, arsane and/or amine of the general formula E(R3R4R5) with E = phosphorus, arsenic or nitrogen and R3, R4 and R5 identical or different, selected from alkyl, aryl residue and/or OR6 with R6 = alkyl and/or aryl residue, wherein O2CR1 and O2CR2 are identical or different carboxylates and wherein the residues R1 and R2 are independently an optionally substituted, branched, unbranched or cyclic alkyl or aryl residue or H and wherein CO are carbonyls.