Method for the Production of a Substrate Having a Coating Comprising Copper, and Coated Substrate and Device Prepared by This Method

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a method to create a coated substrate by depositing a copper-containing layer using atomic layer deposition (ALD). The process involves a fluorine-free copper complex and a secondary metal complex (ruthenium, nickel, or palladium), leading to a thin, uniform metal coating. After deposition, a reduction process is applied to enhance the coating properties. The coated substrates and devices produced via this method are also covered by the patent.

Use CasesContent extracted from patent full text and abstract with AI.

• Fabrication of electronic components with copper-based conductive layers
• Production of advanced semiconductor devices and integrated circuits
• Manufacturing of printed circuit boards (PCBs) and interconnects
• Creation of corrosion-resistant metal coatings for industrial parts
• Development of specialized optical and sensing devices
• Formation of metal contacts in microelectromechanical systems (MEMS)

BenefitsContent extracted from patent full text and abstract with AI.

• Enables creation of highly uniform and thin copper-containing films by ALD, ensuring precision and quality
• Avoids the use of fluorine, reducing potential environmental and equipment corrosion issues
• Allows integration of additional metals (ruthenium, nickel, palladium) for tunable coating properties
• Improves reliability of coated devices due to enhanced layer adhesion and reduction step
• Versatile method suitable for next-generation electronics and semiconductor manufacturing
• Supports miniaturization in electronics by precisely controlling coating thickness and composition

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Patent Abstract

A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.