Method and Device for Determining the Temperature Calibration Characteristic of a Power Electronics Semiconductor Component

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This invention provides a method and device for quickly and economically determining the temperature calibration curve of a power semiconductor component, such as an IGBT, MOSFET, diode, or thyristor. It achieves this by measuring voltage and temperature while actively heating the component using its own power dissipation, thus enabling more accurate calibration directly in the intended installation environment with much shorter calibration times compared to traditional methods.

Use CasesContent extracted from patent full text and abstract with AI.

• In-situ temperature calibration of power semiconductor modules in electric vehicles or industrial drives.
• Automated quality control processes in semiconductor manufacturing and testing facilities.
• Routine maintenance and diagnostics of power electronics in renewable energy inverters (such as solar or wind).
• Improved thermal management in power electronic systems by enabling more accurate monitoring and protection mechanisms.
• Research and development of new semiconductor materials and devices with precise thermal calibration.

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly faster calibration times (minutes versus hours) compared to conventional processes.
• Economic and simple setup that can be performed directly at the site of operation, minimizing the need for specialized external equipment.
• Increased measurement accuracy and relevance due to calibration occurring under actual operating conditions.
• Improved consistency and repeatability by reducing environmental variables and manual intervention.
• Enables broader adoption of precise temperature sensing and protection in power electronics, potentially increasing the reliability and longevity of these devices.

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Patent Abstract

The invention relates to methods and devices for determining the temperature calibration characteristic curve of a semiconductor component (3) appertaining to power electronics. They are distinguished, in particular, by the fact that the temperature calibration characteristic curve can be determined in a simple and economically advantageous manner. For this purpose, the power connections of the semiconductor component (3) are interconnected - with a first current source (1) for a load current, - with a second current source (2) for a measurement current - with a voltmeter (v) for measuring the voltage dropped across either the power connections or auxiliary connections connected to the power connections. Furthermore, the semiconductor component (3) connected to a data processing system is - heated by means of the power loss thereof at intervals with the first current source (1) switched on and - the voltage dropped across the power or auxiliary connections with the first current source (1) switched off and the second current source (2) switched on is measured between the intervals after a time duration determined by the thermal main time constant of the semiconductor component (3) as values representing the temperature including the associated temperatures. Following an approximation the values form the calibration characteristic curve of the semiconductor component (3).