Manufacture of silicon-based layer involves applying silicon nanoparticles-containing suspension on substrate, applying silicon-based compound-precursor solution containing organohalosilane compound, and further applying silicon-based ink

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This patent describes a method for creating a silicon-based layer on a substrate by sequentially applying a suspension of silicon nanoparticles, a precursor solution containing an organohalosilane compound, and a silicon-based ink. The process can be carried out under atmospheric or inert conditions, followed by applying energy to produce the final silicon-based layer.

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• Manufacturing of advanced coatings for electronic components
• Production of silicon-based thin films for semiconductor devices
• Creation of efficient conductive layers in solar panels and photovoltaic devices
• Development of nanostructured sensors or microelectronic circuits

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• Enhanced control over layer composition and properties due to the tailored application of different silicon sources
• Potential for improved electrical performance and stability in semiconductor and electronic applications
• Process can be performed under atmospheric or inert environments, adding flexibility and scalability for industrial production
• Enables the integration of nanotechnology into silicon-based materials, leading to advanced functional properties

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Patent Abstract

Silicon nanoparticles-containing suspension is applied on a substrate, and a silicon-based compound-precursor solution containing organohalosilane compound (I) is further applied on the substrate. The silicon-based ink is applied on substrate under atmospheric pressure or inert atmosphere, and energy is applied to obtain silicon-based layer. Silicon nanoparticles-containing suspension is applied on a substrate, and a silicon-based compound-precursor solution containing organohalosilane compound of formula: R'RSiX 2(I) is further applied on the substrate. The silicon-based ink is applied on substrate under atmospheric pressure or inert atmosphere, and energy is applied to obtain silicon-based layer. R,R' : H, chloro, bromo or organic residue, in which R and R' are not simultaneously same;and X : chloro or bromo.