Step-wise formation of a three-dimensional structure employing different resolutions

Publication: LU101722B1
Published: 2021-09-30
Family Size: 4
Granted: Yes (1/4)

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention presents a method for creating three-dimensional (3D) micro- and nano-scale structures by selectively exposing a photosensitive material (resist) to radiation at different resolutions. By dynamically adjusting the exposure resolution and voxel (3D pixel) sizes during the fabrication process, it enables faster production of complex structures with both coarse larger features and fine detailed features, optimizing both speed and precision.

Use CasesContent extracted from patent full text and abstract with AI.

  • Manufacturing of advanced microchannel or nanofluidic sensors and devices
  • Fabrication of integrated optical components such as micro-lenses or waveguides
  • Production of micro- and nano-structured mechanical or biomedical devices
  • Creation of semiconductor device features at varying scales
  • Additive manufacturing of multi-scale 3D parts requiring both robust supports and intricate details

BenefitsContent extracted from patent full text and abstract with AI.

  • Significantly reduces manufacturing time for complex nano- and micro-scale 3D structures
  • Allows for a combination of high-strength coarse features and high-precision fine features within a single process
  • Enables scalable and cost-effective production useful for high-volume industrial applications
  • Improves flexibility in design by allowing resolution changes during fabrication
  • Potentially lowers production costs by optimizing material use and process time

Technical Classifications (CPCs)

Main Classifications

Manufacturing & Transport

Sub Classifications

Additive Manufacturing

Working Plastics & Substances

CPC Codes

B29C64/135B29C64/176B29C64/264B29C64/393B33Y10/00

Inventors & Applicants

Applicants

Univ Hamburg

Patent Abstract

A method of step-wise exposing a voxel of a resist to radiation for forming a three-dimensional structure, the method comprising setting a step size to a first resolution; setting a voxel volume to a first volume; exposing a first set of voxels of said first volume to radiation using said first resolution; setting the step size to a second resolution being smaller than said first resolution, or, respectively, greater than said first resolution; setting the voxel volume to a second volume being smaller than said first volume, or, respectively, greater than said first volume; and exposing a second set of voxels of said second volume to radiation using said second resolution.

Key Information

Publication No.

LU101722B1

Family ID

70334010

Publication Date

2021-09-30

Application No.

LU101722A

Application Date

2020-03-31

Priority Date

2020-03-31

Granted

Yes (1/4)

Possible Cooperation

For further information please contact the transfer office.