Integration of Semiconductor Membranes with Piezoelectric Substrates

Publication: US2021367138A1
Published: 2021-11-25
Family Size: 5
Granted: Yes (1/5)

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention describes a method and structure for integrating ultra-thin semiconductor membranes (such as silicon) directly onto piezoelectric substrates without using any intermediate bonding layers (like adhesives or metals). The process relies on polishing the piezoelectric substrate surface to extreme smoothness, enabling strong, direct physical adhesion of the semiconductor membrane. This results in improved piezoelectrically actuated devices, where electrical signals applied to the piezoelectric material can induce mechanical strain in the semiconductor membrane, making it useful in a variety of electronic, optical, and sensing applications.

Use CasesContent extracted from patent full text and abstract with AI.

  • Fabrication of tunable optoelectronic devices (e.g., LEDs or lasers) with strain-controlled emission properties.
  • Development of highly sensitive chemical or biochemical sensors using integrated semiconductor-piezoelectric structures.
  • Construction of high-performance microelectromechanical systems (MEMS) or nanoelectromechanical systems (NEMS), such as resonators and RF devices.
  • Implementation of advanced strain-sensitive electronics and flexible/stretchable microelectronics.
  • Integration into nanopore DNA sequencing devices, with electrically tunable nanopore sizes via induced strain.
  • Creation of next-generation surface acoustic wave (SAW) devices for signal processing or acoustic sensing.
  • Development of artificial eardrum or acoustic transducer devices.

BenefitsContent extracted from patent full text and abstract with AI.

  • Eliminates the need for intermediate bonding agents, avoiding performance degradation caused by adhesives or metals.
  • Enables efficient and direct strain transfer between the piezoelectric substrate and semiconductor, providing heightened mechanical and electrical performance.
  • Compatible with a wide range of semiconductor and piezoelectric materials, offering flexibility for diverse applications.
  • Allows pre-fabrication and patterning of microelectronic devices on the semiconductor membrane before integration, enhancing process efficiency and device quality.
  • Reduces the introduction of contaminants or incompatibilities, which is particularly valuable for biological or chemical sensor applications.
  • Supports ultra-thin, flat, and conformal membrane integration, ideal for sensitive microscale and nanoscale devices.
  • Can be applied at low temperatures, preserving delicate device features and the functional properties of piezoelectric and semiconductor materials.

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Manufacturing & Transport

Sub Classifications

Generating Mechanical Vibrations

Semiconductor & Solid-State Devices

CPC Codes

B06B1/0644H10N30/03H10N30/072H10N30/206H10N30/802H10N30/8554H10N30/875

Inventors & Applicants

Applicants

Wisconsin Alumni Res Found

Univ of Hamburg

Patent Abstract

Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.

Key Information

Publication No.

US2021367138A1

Family ID

78608415

Publication Date

2021-11-25

Application No.

US202016881305A

Application Date

2020-05-22

Priority Date

2020-05-22

Granted

Yes (1/5)

Possible Cooperation

For further information please contact the transfer office.