Lateral High-Voltage MOS Transistor with RESURF Structure

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a lateral high-voltage MOS transistor that employs a novel RESURF (Reduced Surface Field) structure within its drift region. By introducing multiple RESURF doping regions of alternating conductivity types, separated both laterally and vertically within the drift area, the transistor achieves a combination of low "on" resistance (RON) and high breakdown voltage. The special arrangement compensates charge carriers efficiently, allowing increased doping levels for lower resistance without compromising voltage tolerance.

Use CasesContent extracted from patent full text and abstract with AI.

• Power electronic circuits requiring high-voltage switching with low losses
• Automotive electronics, such as inverters or motor control units
• Industrial automation and robotics power modules
• High-efficiency LED driver circuits
• Electric vehicle (EV) powertrains and battery management systems
• HVAC systems involving power converters
• Smart grid switching elements and renewable energy inverters

BenefitsContent extracted from patent full text and abstract with AI.

• Offers reduced on-resistance (RON), decreasing energy loss during operation and increasing efficiency
• Enables high breakdown voltage, making the device suitable for high-voltage applications
• Allows higher doping concentrations in the drift region without sacrificing device reliability
• Can contribute to more compact, more efficient power modules with better thermal characteristics
• Improves overall energy efficiency of end-user systems by minimizing power dissipation
• Enables robust operation in demanding environments, such as automotive or industrial sectors

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

In order to obtain an improved combination of a low "on" resistance with a high breakdown voltage, a lateral high-voltage MOS transistor has a plurality of RESURF doping regions (132-150) of the first conductivity type in the drift region (108), wherein the RESURF doping regions are separated from one another in a first lateral direction (y) parallel to the substrate surface and perpendicular to a connection line between the source region and the drain region, and in a vertical direction (z) perpendicular to the substrate surface by drift region sections (110-130) such that, in each of the above-mentioned two directions, an alternating arrangement of regions of the first and second conductivity types is present.