A Single Layer 3d Tracking Semiconductor Detector

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a novel pixel detector that uses a single semiconductor sensor layer to extract three-dimensional (3D) information about particle trajectories. By connecting neighboring read-out circuits with relative timing circuits, the detector can determine the z-coordinate (depth information) of charge generation events without needing a fast global clock or multiple stacked layers. This enables efficient 3D particle tracking in a compact, low-power device.

Use CasesContent extracted from patent full text and abstract with AI.

• Medical imaging, particularly in SPECT devices for nuclear medicine using Compton cameras
• Radiation monitoring and safety, such as monitoring for radioactive contamination or decommissioning of nuclear power plants
• Hadron therapy and proton therapy beam monitoring in cancer treatment facilities
• Neutron imaging for security applications and material analysis
• Astrophysical X-ray and gamma-ray polarimetry, such as satellite instruments investigating celestial photon sources
• Research labs tracking high-energy and low-energy particle trajectories in physics experiments

BenefitsContent extracted from patent full text and abstract with AI.

• Enables true 3D particle trajectory reconstruction using a single semiconductor layer, avoiding the need for multiple stacked detectors
• Reduces power consumption by eliminating the need for a fast global clock—timing information is derived using localized relative circuits
• Compact and robust design, making it suitable for portable or space-constrained applications
• Improves accuracy and resolution in imaging and tracking applications due to enhanced depth (Z-axis) information
• May simplify or enhance Compton camera designs, potentially allowing the omission of certain detector layers and reducing required patient dose in medical applications
• Versatile in material choices (e.g., Si, Ge, CdTe, GaAs, diamond), allowing adaptation to different radiation types and energy ranges

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.