Semiconductor Device

Simple SummaryContent extracted from patent full text and abstract with AI.

This invention is a semiconductor component made from a silicon carbide (SiC) substrate with separate electrodes composed of at least one monolayer of epitaxial graphene placed on the SiC. The electrodes are separated so that the current channel is formed through the SiC substrate, not the graphene. This approach leverages the excellent electrical properties of both silicon carbide and epitaxial graphene to create advanced electronic devices with improved performance and potentially simpler and cheaper fabrication processes compared to existing technologies.

Use CasesContent extracted from patent full text and abstract with AI.

• High-power electronics such as power transistors for inverters and converters in electric vehicles and renewable energy systems
• Radio-frequency (RF) and microwave electronics, including amplifiers and switches
• High-voltage switching devices in industrial and grid applications
• Ultra-fast logic circuits in integrated circuits (ICs) and system-on-chip (SoC) designs
• Sensors and detectors requiring robust, stable, and fast electronic responses
• Harsh-environment electronics, such as those used in automotive, aerospace, and energy sectors

BenefitsContent extracted from patent full text and abstract with AI.

• Lower contact resistance and improved current injection due to the graphene-SiC interface
• High carrier mobility and current-carrying capability from graphene electrodes
• Enhanced power handling and voltage tolerance from silicon carbide substrate
• Tolerance to substrate defects, allowing use of less expensive SiC materials
• Simplified and potentially lithography-free fabrication processes
• CMOS compatibility and ease of integration with existing semiconductor manufacturing
• Ability to fabricate both normally-on and normally-off devices, aiding safe circuit design
• Good mechanical, chemical, and thermal robustness for use in demanding environments

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

Semiconductor component (1, 20, 30) comprising a semiconductor substrate (3) composed of silicon carbide and comprising separate electrodes (4, 5), applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene (11) on silicon carbide, in such a way that a current channel is formed between the electrodes (4, 5) through the semiconductor substrate (3).