Semiconductor Device Comprising a Semiconductor Element with a Contacting Element Produced by Thermal Spraying, and a Method of Producing the Same

Publication: EP4224521A1
Published: 2023-08-09
Family Size: 6
Granted: No

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a semiconductor device where the electrical contacting element (such as a metal layer) is created by spraying metal particles onto the semiconductor using a thermal spraying process. The resulting metallic contact forms a textured, somewhat porous layer that improves stress distribution and mechanical buffering, thereby increasing the device's operating lifetime. The patent also covers methods for making this contact and integrating it into semiconductor assemblies like rectifiers and inverters.

Use CasesContent extracted from patent full text and abstract with AI.

  • Power electronics modules (e.g., converters, inverters, rectifiers) in industrial, automotive, or renewable energy systems
  • High-reliability semiconductor devices where mechanical stress or thermal cycling is a concern, such as IGBT modules, MOSFETs, and diodes
  • Advanced packaging and interconnection solutions for semiconductor chips using thermal spraying to improve durability and reliability
  • Electronics in harsh environments or with significant mechanical/thermal demands (railway, aerospace, grid infrastructure)

BenefitsContent extracted from patent full text and abstract with AI.

  • Enhanced mechanical and thermal robustness of electrical contacts due to the textured, flexible contact layer
  • Reduction of stress transfer and crack formation in the underlying semiconductor, thus extending product lifetime
  • Tolerance to thermal expansion mismatch between the semiconductor and metal layers due to the contact's porous and elastic properties
  • Potential for improved electrical conductivity and reliability versus standard wire bonding methods, especially for copper contacts
  • Process versatility, applicable to a wide range of semiconductor devices and compatible with modern industrial manufacturing

Technical Classifications (CPCs)

Main Classifications

Chemistry & Materials Science

Electrical & Electronic Tech

Sub Classifications

Coating Metallic Material

Electric Elements

CPC Codes

C23C4/02C23C4/06C23C4/08C23C4/129C23C4/131C23C4/134C23C24/04C23C24/08C23C28/023C23C28/028H01L21/60H01L23/485H01L23/49H01L24/03H01L24/05H01L24/06H01L24/48H01L24/72

Inventors & Applicants

Applicants

Siemens Ag

Univ Friedrich Alexander Er

Patent Abstract

The invention relates to a semiconductor arrangement (2) comprising a semiconductor element (4) with at least one connection element (6), wherein at least one metallic contacting element (10) is connected over its surface area to the at least one connection element (6) of the semiconductor element (4). To extend the lifetime of the semiconductor arrangement (2), it is proposed that the at least one metallic contacting element (10) is produced by being sprayed onto the semiconductor element (4) by means of a thermal spraying process, wherein the metallic contacting element (10) comprises particles (P1, P2) which form a textured layer (12).

Key Information

Publication No.

EP4224521A1

Family ID

80446920

Publication Date

2023-08-09

Application No.

EP22155438A

Application Date

2022-02-07

Priority Date

2022-02-07

Granted

No

Possible Cooperation

For further information please contact the transfer office.