Electronic device

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes an electronic device that utilizes a semiconductor substrate, such as silicon carbide, with two types of graphene monolayer electrodes on its surface. One electrode forms an ohmic contact (allowing easy current flow) with the substrate, while the other forms a Schottky barrier (acting as a diode). The invention leverages the excellent conductivity of graphene for robust electrode contacts while exploiting the semiconductor’s band gap for high device performance, making it possible to create components such as transistors, diodes, capacitors, and resistors integrated on a single chip.

Use CasesContent extracted from patent full text and abstract with AI.

• High-frequency and high-power electronic circuits, especially where silicon carbide substrates are advantageous.
• Integrated circuits (ICs) and logic circuits with improved switching performance and robustness, such as transistors, inverters, NAND gates, and ring oscillators.
• Current regulation and limiting devices like current-limiting diodes (CLDs) and current regulation diodes (CRDs).
• Electronic components for harsh environments, including high temperature, strong chemical, or radiation exposure.
• Miniaturized passive and active electronic components (resistors, capacitors, diodes, transistors) for next-generation microelectronics.
• Sensors and power devices benefiting from high mobility and current-carrying capacity of graphene electrodes.

BenefitsContent extracted from patent full text and abstract with AI.

• Combines the high carrier mobility and conductivity of graphene with the robust switching and high voltage handling of silicon carbide.
• Enables more efficient, lower-loss contacts and interfaces in semiconductor electronics by using graphene electrodes.
• Allows fine-tuning and local patterning of device characteristics thanks to controlled creation of ohmic and Schottky contacts with the same material (graphene) via preparation techniques.
• Reduces contact resistance and overall device parasitic losses.
• Improves device integration density through compatibility with standard lithography and feature sizes down to 1 µm or below.
• Provides operation stability in extreme environments (heat, chemicals, radiation) due to the inherent stability of graphene and silicon carbide.
• Simplifies the manufacturing process with potential for large-area patterning and conversion between graphene contact types (ohmic and Schottky) post-fabrication.
• Enables the construction of both 'normally on' and 'normally off' device architectures as needed.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

An electronic device (1) comprising a semiconductor substrate (3) having a front surface (7), a first electrode (8) and a second electrode (9) disposed on the front surface (7) of the substrate (3), wherein the first electrode (8) and the second electrode (9) each comprises at least one epitaxial graphene monolayer (10). The at least one epitaxial graphene monolayer (10) of the first electrode (8) is forming an ohmic contact with the substrate (3) and the at least one epitaxial graphene monolayer (10) of the second electrode (9) is forming a Schottky barrier with the substrate (3).