Electron Source for Generating an Electron Beam

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This invention describes a novel electron source capable of generating a focused, high-energy electron beam. The key innovation lies in using a graphene layer as anode and/or cathode, epitaxially grown on a silicon carbide substrate, enabling all main components (cathode, anode, focusing elements) to be fabricated monolithically on a single silicon carbide chip. This approach allows for highly miniaturized, integrated on-chip electron sources, suitable even as compact X-ray sources.

Use CasesContent extracted from patent full text and abstract with AI.

• On-chip X-ray emission sources for medical imaging or diagnostics
• Miniaturized electron sources for electron microscopy (e.g., scanning electron microscopes, SEMs)
• Integrated electron beam lithography in semiconductor manufacturing
• Portable/handheld X-ray devices for material analysis or security screening
• Compact particle accelerators for research or medical therapies
• On-chip synchrotron radiation sources for laboratory-scale experiments

BenefitsContent extracted from patent full text and abstract with AI.

• Enables significant miniaturization and integration, reducing the size, complexity, and cost of electron and X-ray sources.
• Monolithic chip fabrication improves reliability, robustness, and manufacturing scalability.
• High emission stability, long operational lifetime, and potentially lower maintenance compared to traditional thermionic or field emission sources.
• Compatible with conventional silicon carbide processing, making it industrially feasible for wafer-scale production.
• Graphene's exceptional robustness allows for high current density and stable operation under demanding conditions.
• Improved integration with other electronic, mechanical, or mechatronic systems on a single chip.
• Allows development of portable and novel diagnostic or analytical instrumentation.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to an electron source (2) for generating an electron beam (8), comprising a cathode (1) and an anode (4) in the form of a graphene layer (6, 12) which is epitaxially grown with a silicon carbide substrate (5). The invention is suitable for the monolithic production of a miniaturized source of a focused high-energy electron beam, including for the use thereof as an on-chip X-ray source. All components can be produced from or on a single silicon carbide chip.