Aln Bulk Single Crystal, Semiconductor Device, and Process for Producing Aln Single Crystal Bulk

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention relates to a method for growing high-quality, low-defect aluminum nitride (AlN) bulk single crystals using a sublimation technique. This process involves selecting a specific orientation (inclined plane) of a seed crystal made from AlN or other hexagonal materials like SiC, GaN, or ZnO, which significantly reduces defect propagation and impurity incorporation during crystal growth. The resulting AlN crystals are particularly suited for advanced semiconductor device applications.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing substrates for ultraviolet (UV) and deep-UV optoelectronic devices such as LEDs and laser diodes
• Production of high-power and high-frequency electronic devices (e.g., transistors, diodes)
• Creation of high-performance semiconductor sensors
• Base material for further AlN-based epitaxial growth processes
• Industrial production of large-diameter, high-purity AlN wafers for research and commercial device fabrication

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly reduces the density of crystal defects, thus improving device performance and reliability
• Allows the use of less expensive, non-AlN seed crystals like SiC, which are easier to obtain
• Yields large-diameter, thick AlN crystals, enabling scalability for industrial production
• Improves matching at the interface between seed and grown crystal, reducing impurities and new defect generation
• Enables repeated use of grown AlN crystals as new seed crystals (homoepitaxial growth), further improving purity and quality
• Suitable for advanced semiconductor and optoelectronic applications that demand high-quality substrates

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane ( Fig. 1(a) ), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method ( Fig. 1(b) ).