Crystal Growth Apparatus for Producing a Single Crystal

Simple SummaryContent extracted from patent full text and abstract with AI.

The invention discloses a novel crystal growth apparatus designed for producing and enlarging single crystals, especially using methods like Physical Vapor Transport (PVT). Key to this design is the use of two distinct thermal insulations with different thermal conductivities strategically placed around the growth crucible. The side walls are surrounded by a highly insulating material, while a less insulating (but still thermally resistant) layer is positioned above the crucible lid. This configuration allows for precise control of axial and radial temperature gradients within the crucible, minimizing stress and defects in the growing single crystal, thereby enabling the production of large, high-quality crystals.

Use CasesContent extracted from patent full text and abstract with AI.

• Manufacturing of large single crystals of silicon carbide (SiC) for semiconductor wafers used in power electronics and high-frequency devices.
• Production of single crystals for optoelectronic applications, such as LEDs and laser diodes.
• Creation of high-purity crystals for research and characterization in materials science.
• Growth of gemstone-quality crystals for the jewelry industry.
• Growth of single crystals such as aluminum nitride (AlN) and zinc oxide (ZnO) for electronic and optoelectronic components.
• Use in chemical vapor deposition (CVD) processes or melt-based crystal growth methods like Bridgman and Vertical Gradient Freeze.

BenefitsContent extracted from patent full text and abstract with AI.

• Significantly improved control over temperature gradients, reducing crystal defects and stresses.
• Enables the production of large-diameter single crystals (up to 300 mm or more), suitable for modern industry needs.
• Versatile design adaptable to different crystal growth techniques and materials.
• Ability to fine-tune thermal isolation for optimal crystal growth conditions, allowing for the fabrication of crystals with low defect densities.
• Potential reduction in energy consumption due to optimized thermal management and effective insulation combinations.
• Facilitates stable crystal growth with minimal dislocations, leading to enhanced material performance in end applications.

Technical Classifications (CPCs)

Inventors & Applicants

Patent Abstract

The invention relates to a crystal growing unit, comprising a growth crucible for producing and/or enlarging a single crystal (4). The crystal growing unit has a first thermal insulation (5) having a first thermal conductivity and a second thermal insulation (12) having a second thermal conductivity. The growth crucible has a crucible base, a crucible side wall and a crucible cover. The crucible side wall is directly or indirectly surrounded by the first thermal insulation (5). The second thermal insulation (12) is directly or indirectly arranged above the crucible cover. The second thermal conductivity is greater than the first thermal conductivity.