Method for Testing a High-Power Semiconductor Element

Publication: WO2016034233A1
Published: 2016-03-10
Family Size: 5
Granted: Yes (2/5)

Simple SummaryContent extracted from patent full text and abstract with AI.

This patent describes a method for testing high-power semiconductor elements—particularly those used in high-voltage direct current (HVDC) power transmission systems. The proposed method utilizes a test circuit made up of several voltage-regulated power converter modules linked in series and connected to a high-current transformer. A unique aspect of this testing approach is that, during a specific phase of the test cycle, the converter modules are switched into an undefined (high-impedance) state. This prevents transformer core saturation, enabling repeated, reliable high-current testing of power semiconductors with extended service life for test equipment components.

Use CasesContent extracted from patent full text and abstract with AI.

  • Testing of high-power semiconductor devices (such as thyristors or IGBTs) used in HVDC power transmission systems
  • Routine quality assurance and reliability testing for semiconductors in power converter manufacturing
  • Type and stress testing of power semiconductors for static var compensators (SVCs) and large industrial drives
  • Certification testing of new semiconductor technologies for grid-level energy transmission applications
  • Developing laboratory or production-line test benches for manufacturers of high-power electronic components

BenefitsContent extracted from patent full text and abstract with AI.

  • Prevents transformer core saturation during repeated high-current tests, ensuring test accuracy and equipment longevity
  • Enables flexible adjustment of test current profiles, matching real-world operating conditions more closely
  • Test circuit components, particularly the high-current transformer and converters, have an extended service life due to reduced stress
  • Reduces dependency on grid frequency, allowing testing at frequencies matching field operation (e.g., 50Hz or 60Hz)
  • Test system is less complex and more efficient compared to earlier back-to-back or synthetic test rigs, requiring lower overall energy input from the grid
  • Improved safety and reliability in qualification testing of power semiconductors critical for modern power transmission infrastructure

Technical Classifications (CPCs)

Main Classifications

Electrical & Electronic Tech

Physics & Measurement

Sub Classifications

Electric Power Generation & Distribution

Measuring & Testing

CPC Codes

G01R31/2608G01R31/263G01R31/3336H02M7/4835

Inventors & Applicants

Applicants

Siemens Ag

Friedrich Alexander Universität Erlangen Nürnberg

Patent Abstract

A method for testing a high-power semiconductor element (11) of power converters of the high-voltage direct current transmission by means of a test circuit (20) comprising a number of voltage-regulated power converter modules (16) switched in series which can be connected to the primary side of a high-current transformer (9) and in which the secondary side of the high-current transformer (9) can be connected to the high-power semiconductor element (1), should enable a high-current test of a high-power semiconductor element by means of a described test circuit at a particularly high service life of the components used. For this purpose, the voltage-regulated power converter modules (16) are switched in a temporal phase of a test cycle into an undefined state.

Key Information

Publication No.

WO2016034233A1

Family ID

51485631

Publication Date

2016-03-10

Application No.

EP2014068821W

Application Date

2014-09-04

Priority Date

2014-09-04

Granted

Yes (2/5)

Possible Cooperation

For further information please contact the transfer office.